منابع مشابه
SiGeC Cantilever Micro Cooler
The fabrication and characterization of SiGeC cantilever microcoolers are described. Silicon on insulator (SOI) was used as the substrate, and two layers of 3 μm p-SiGe0.07C0.0075 and 1.14 μm n-SiGe0.07C0.0075 lattice matched to silicon were grown using molecular beam epitaxy. The uni couple cooler was fabricated using conventional integrated circuit (IC) processing, and the cantilever structur...
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ژورنال
عنوان ژورنال: Materials Today
سال: 2014
ISSN: 1369-7021
DOI: 10.1016/j.mattod.2014.04.012